Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
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- 作者：James T. Griffiths ; Siyuan Zhang ; Bertrand Rouet-Leduc ; Wai Yuen Fu ; An Bao ; Dandan Zhu ; David J. Wallis ; Ashley Howkins ; Ian Boyd ; David Stowe ; Menno J. Kappers ; Colin J. Humphreys ; Rachel A. Oliver
- 刊名：Nano Letters
- 出版年：2015
- 出版时间：November 11, 2015
- 年：2015
- 卷：15
- 期：11
- 页码：7639-7643
- 全文大小：424K
- ISSN：1530-6992
文摘
Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.