Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors

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• 作者：Marios Constantinou ; Vlad Stolojan ; Kiron Prabha Rajeev ; Steven Hinder ; Brett Fisher ; Timothy D. Bogart ; Brian A. Korgel ; Maxim Shkunov
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：7
• 期：40
• 页码：22115-22120
• 全文大小：345K
• ISSN：1944-8252

文摘

In this letter, we demonstrate a solution-based method for a one-step deposition and surface passivation of the as-grown silicon nanowires (Si NWs). Using N,N-dimethylformamide (DMF) as a mild oxidizing agent, the NWs鈥?surface traps density was reduced by over 2 orders of magnitude from 1 脳 10¹³ cm^鈥? in pristine NWs to 3.7 脳 10¹⁰ cm^鈥? in DMF-treated NWs, leading to a dramatic hysteresis reduction in NW field-effect transistors (FETs) from up to 32 V to a near-zero hysteresis. The change of the polyphenylsilane NW shell stoichiometric composition was confirmed by X-ray photoelectron spectroscopy analysis showing a 35% increase in fully oxidized Si⁴⁺ species for DMF-treated NWs compared to dry NW powder. Additionally, a shell oxidation effect induced by DMF resulted is a more stable NW FET performance with steady transistor currents and only 1.5 V hysteresis after 1000 h of air exposure.