Doping Effect of Electron Transport Layer on Nanoscale Phase Separation and Charge Transport in Bulk Heterojunction Solar Cells

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• 作者：Kyung-Sik Shin ; Hye-Jeong Park ; Gyu Cheol Yoon ; Soon-Wook Jeong ; Brijesh Kumar ; Sang-Woo Kim
• 刊名：Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：November 27, 2013
• 年：2013
• 卷：117
• 期：47
• 页码：24692-24699
• 全文大小：721K
• 年卷期：v.117,no.47(November 27, 2013)
• ISSN：1932-7455

文摘

We investigated the influence of the Ga doping in the ZnO interlayer as an electron transport layer (ZnO ETL) on the nanoscale phase separation in the bulk heterjunction (BHJ) layer coated on the ETL as well as the morphological and electrical properties of a low temperature sol鈥揼el-derived pristine ZnO ETL (P-ETL) and Ga-doped ZnO ETL (G-ETL), which affect the performance of inverted organic solar cells (IOSCs). X-ray photoelectron spectroscopy (XPS) confirms the successful incorporation of the element Ga in the ZnO ETL. The short circuit current densities (J_SC) of IOSCs fabricated using a G-ETL were significantly improved from those of IOSCs fabricated with a P-ETL. The maximum J_SC was obtained at 2 at. % Ga doping. The IOSCs fabricated with a 2 at. % G-ETL demonstrated power conversion efficiencies of 3.51% (P3HT:PC₆₀BM) and 5.43% (PCDTBT:PC₇₀BM), which were higher than the power conversion efficiencies of 2.88% (P3HT:PC₆₀BM) and 4.90% (PCDTBT:PC₇₀BM) of the IOSCs fabricated with a P-ETL under simulated air mass 1.5 global full-sun illumination. The better performance was attributed to the improved electrical properties of the G-ETL and the enhanced nanoscale phase separation in the BHJ active layer.