Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning
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- 作者：Gheorghe Stan ; Cristian V. Ciobanu ; Igor Levin ; Hui J. Yoo ; Alan Myers ; Kanwal Singh ; Christopher Jezewski ; Barbara Miner ; Sean W. King
- 刊名：Nano Letters
- 出版年：2015
- 出版时间：June 10, 2015
- 年：2015
- 卷：15
- 期：6
- 页码：3845-3850
- 全文大小：430K
- ISSN：1530-6992
文摘
Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today鈥檚 cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of the relationships between stresses in the system and the ensuing morphologies. Here, we analyze quantitatively the buckling mechanics of organosilicate fins that are capped with hard masks in the process of lithographic formation of deep interconnects. We propose an analytical model that quantitatively describes the morphologies of the buckled fins generated by residual stresses in the hard mask. Using measurements of mechanical properties and geometric characteristics, we have verified the predictions of the analytical model for structures with various degrees of buckling, thus putting forth a framework for guiding the design of future nanoscale interconnect architectures.