Silicon nanowires were grown by gold-catalyzed chemical vapor deposition in the vapor liquid solid mode. In this paper, we use grazing incidence X-ray diffraction and multiwavelength anomalous diffraction to investigate the presence of gold and its effects on silicon nanowire strain after different chemical and physical treatments. We especially focus on the efficiency of the 鈥渢hermal oxidation鈥搊xide etching鈥?cycle to remove the gold contamination. Analysis reveals a decrease of the contamination and a 鈥渃ore鈥搒hell like鈥?spatial distribution of gold, but also shows that this technique is not efficient enough to remove all traces of gold from the nanowires.