High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector鈥揙ne Resistor Arrays

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• 作者：Wootae Lee ; Jubong Park ; Seonghyun Kim ; Jiyong Woo ; Jungho Shin ; Godeuni Choi ; Sangsu Park ; Daeseok Lee ; Euijun Cha ; Byoung Hun Lee ; Hyunsang Hwang
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：September 25, 2012
• 年：2012
• 卷：6
• 期：9
• 页码：8166-8172
• 全文大小：453K
• 年卷期：v.6,no.9(September 25, 2012)
• ISSN：1936-086X

文摘

We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO_x/TiO₂/TaO_x structure, high current density over 10⁷ A cm^鈥? and excellent nonlinear characteristics up to 10⁴ were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO₂ film, and consequently, the energy band of the TiO₂ film was symmetrically bent at the top and bottom TaO_x/TiO₂ interfaces and modified as a crested oxide barrier. Furthermore, the one selector鈥搊ne resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.

Keywords:

resistance random access memory; selection device; nonlinearity; crested oxide barrier; one selector鈭抩ne resistor