Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique
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文摘
Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the semiconductor have been recorded.

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