Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory

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• 作者：Yu-Ting Huang ; Chun-Wei Huang ; Jui-Yuan Chen ; Yi-Hsin Ting ; Kuo-Chang Lu ; Yu-Lun Chueh ; Wen-Wei Wu
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：September 23, 2014
• 年：2014
• 卷：8
• 期：9
• 页码：9457-9462
• 全文大小：504K
• ISSN：1936-086X

文摘

Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In₂Se₃) was selected due to its high resistivity ratio and lower programming current. Au/In₂Se₃-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.

Keywords:

phase change; PCRAM; nanodevices; in situ TEM; nonvolatile memory; In₂Se₃