Highly Efficient Polymer Light-Emitting Diodes Using Graphene Oxide as a Hole Transport Layer
详细信息    查看全文
文摘
We present an investigation of polymer light-emitting diodes (PLEDs) with a solution-processable graphene oxide (GO) interlayer. The GO layer with a wide band gap blocks electron transport from an emissive polymer to an ITO anode while reducing the exciton quenching between the GO and the active layer in place of poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS). This GO interlayer maximizes hole鈥揺lectron recombinations within the emissive layer, finally enhancing device performance and efficiency levels in PLEDs. It was found that the thickness of the GO layer is an important factor in device performance. PLEDs with a 4.3 nm thick GO interlayer are superior to both those with PEDOT:PSS layers as well as those with rGO, showing maximum luminance of 39鈥?00 Cd/m2, maximum luminous efficiencies of 19.1 Cd/A (at 6.8 V), and maximum power efficiency as high as 11.0 lm/W (at 4.4 V). This indicates that PLEDs with a GO layer show a 220% increase in their luminous efficiency and 280% increase in their power conversion efficiency compared to PLEDs with PEDOT:PSS.

Keywords:

graphene oxide; polymer light-emitting diodes; hole transport layer; super yellow

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700