Passivation of InGaAs(001)-(2 脳 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer

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• 作者：Mary Edmonds ; Tyler Kent ; Evgueni Chagarov ; Kasra Sardashti ; Ravi Droopad ; Mei Chang ; Jessica Kachian ; Jun Hong Park ; Andrew Kummel
• 刊名：Journal of the American Chemical Society
• 出版年：2015
• 出版时间：July 8, 2015
• 年：2015
• 卷：137
• 期：26
• 页码：8526-8533
• 全文大小：474K
• ISSN：1520-5126

文摘

A saturated Si鈥揌_x seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 脳 4) at substrate temperatures of 250 and 350 掳C. For the first self-limiting process, a single silicon precursor, Si₃H₈, was dosed at a substrate temperature of 250 掳C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si鈥揌_x. For the second self-limiting process, Si₂Cl₆ was dosed at a substrate temperature of 350 掳C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 掳C to remove the Si鈥揅l termination by replacing with Si鈥揌 termination as confirmed by XPS, and STS results confirm the saturated Si鈥揌_x bilayer leaves the InGaAs(001)-(2 脳 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si鈥揌_x monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.