Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires

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• 作者：Chin-Hua Hsieh ; Mu-Tung Chang ; Yu-Jen Chien ; Li-Jen Chou ; Lih-Juann Chen ; Chii-Dong Chen
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：October 8, 2008
• 年：2008
• 卷：8
• 期：10
• 页码：3288-3292
• 全文大小：305K
• 年卷期：v.8,no.10(October 8, 2008)
• ISSN：1530-6992

文摘

Coaxial metal-oxide−semiconductor (MOS) Au−Ga₂O₃−GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au−Ga₂O₃ core−shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO₂ substrate at 800 °C. Subsequently, these core−shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 °C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.