A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm2/V路s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
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- 作者：Gyoungsik Kim ; Seok-Ju Kang ; Gitish K. Dutta ; Young-Kyu Han ; Tae Joo Shin ; Yong-Young Noh ; Changduk Yang
- 刊名：Journal of the American Chemical Society
- 出版年：2014
- 出版时间：July 2, 2014
- 年：2014
- 卷：136
- 期：26
- 页码：9477-9483
- 全文大小：483K
- ISSN：1520-5126
文摘
By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of 10 cm2/V路s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor鈥揳cceptor (D鈥揂) polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm2/V路s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.