Carrier Transport at Metal/Amorphous Hafnium鈥揑ndium鈥揨inc Oxide Interfaces

详细信息    查看全文

• 作者：Seoungjun Kim ; Youngun Gil ; Youngran Choi ; Kyoung-Kook Kim ; Hyung Joong Yun ; Byoungchul Son ; Chel-Jong Choi ; Hyunsoo Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：7
• 期：40
• 页码：22385-22393
• 全文大小：552K
• ISSN：1944-8252

文摘

In this paper, the carrier transport mechanism at the metal/amorphous hafnium鈥搃ndium鈥搝inc oxide (a-HIZO) interface was investigated. The contact properties were found to be predominantly affected by the degree of interfacial reaction between the metals and a-HIZO; that is, a higher tendency to form metal oxide phases leads to excellent Ohmic contact via tunneling, which is associated with the generated donor-like oxygen vacancies. In this case, the Schottky鈥揗ott theory is not applicable. Meanwhile, metals that do not form interfacial metal oxide, such as Pd, follow the Schottky鈥揗ott theory, which results in rectifying Schottky behavior. The Schottky characteristics of the Pd contact to a-HIZO can be explained in terms of the barrier inhomogeneity model, which yields a mean barrier height of 1.40 eV and a standard deviation of 0.14 eV. The work function of a-HIZO could therefore be estimated as 3.7 eV, which is in good agreement with the ultraviolet photoelectron spectroscopy (3.68 eV). Our findings will be useful for establishing a strategy to form Ohmic or Schottky contacts to a-HIZO films, which will be essential for fabricating reliable high-performance electronic devices.