Heteroepitaxial Growth of GaP/ZnS Nanocable with Superior Optoelectronic Response
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- 作者：Linfeng Hu ; Megan M. Brewster ; Xiaojie Xu ; Chengchun Tang ; Silvija Grade膷ak ; Xiaosheng Fang
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：May 8, 2013
- 年：2013
- 卷：13
- 期：5
- 页码：1941-1947
- 全文大小：481K
- 年卷期：v.13,no.5(May 8, 2013)
- ISSN：1530-6992
文摘
We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core鈥搒hell structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP (111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on the (100) plane of the cubic GaP core. Compared with the unitary ZnS nanobelts, the GaP/ZnS coaxial nanocables exhibit improved optoelectronic properties such as high photocurrent and excellent photocurrent stability. This approach opens up new strategy to boost the performance of ZnS-based photodetectors.