Soluble Precursors for CuInSe2, CuIn1鈥?i>xGaxSe2, and Cu2ZnSn(S,Se)4 Based on Colloidal Nanocrystals and Molecular Metal Ch

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• 作者：Chengyang Jiang ; Jong-Soo Lee ; Dmitri V. Talapin
• 刊名：The Journal of the American Chemical Society
• 出版年：2012
• 出版时间：March 21, 2012
• 年：2012
• 卷：134
• 期：11
• 页码：5010-5013
• 全文大小：273K
• 年卷期：v.134,no.11(March 21, 2012)
• ISSN：1520-5126

文摘

We report a new platform for design of soluble precursors for CuInSe₂ (CIS), Cu(In_1鈥?i>xGa_x)Se₂ (CIGS), and Cu₂ZnSn(S,Se)₄ (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe₂, we used Cu_2鈥?i>xSe NCs capped with In₂Se₄^{2鈥?/sup> MCC surface ligands or CuInSe₂ NCs capped with {In₂Cu₂Se₄S₃}3鈥?/sup> MCCs. A mixture of Cu_2鈥?i>xSe and ZnS NCs, both capped with Sn₂S₆4鈥?/sup> or Sn₂Se₆4鈥?/sup> ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications.}