Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core鈥揝hell LED Structures

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• 作者：Xue Wang ; Shunfeng Li ; Matin Sadat Mohajerani ; Johannes Ledig ; Hergo-Heinrich Wehmann ; Martin Mandl ; Martin Strassburg ; Ulrich Steegm眉ller ; Uwe Jahn ; Jonas L盲hnemann ; Henning Riechert ; Ian Griffiths ; David Cherns ; Andreas Waag
• 刊名：Crystal Growth & Design
• 出版年：2013
• 出版时间：August 7, 2013
• 年：2013
• 卷：13
• 期：8
• 页码：3475-3480
• 全文大小：430K
• 年卷期：v.13,no.8(August 7, 2013)
• ISSN：1528-7505

文摘

Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned SiO_x/GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous growth mode. The key parameters and the physical principles of growth of Ga-polar GaN three-dimensional columns are identified, and their potential for manipulating the growth process is discussed. High aspect ratio columns have been achieved using silane during the growth, leading to n-type columns. The vertical growth rate increases with increasing silane flow. In a core鈥搒hell columnar LED structure, the shells of InGaN/GaN multi quantum wells and p-GaN have been realized on a core of n-doped GaN column. Cathodoluminescence gives insight into the inner structure of these core鈥搒hell LED structures.