High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics
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- 作者：Chun-Chieh Lu ; Yung-Chang Lin ; Chao-Hui Yeh ; Ju-Chun Huang ; Po-Wen Chiu
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：May 22, 2012
- 年：2012
- 卷：6
- 期：5
- 页码：4469-4474
- 全文大小：397K
- 年卷期：v.6,no.5(May 22, 2012)
- ISSN：1936-086X
文摘
A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm2/V路s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.