Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

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• 作者：Chun-Da Liao ; Yi-Ying Lu ; Srinivasa Reddy Tamalampudi ; Hung-Chieh Cheng ; Yit-Tsong Chen
• 刊名：Journal of Physical Chemistry A
• 出版年：2013
• 出版时间：October 3, 2013
• 年：2013
• 卷：117
• 期：39
• 页码：9454-9461
• 全文大小：490K
• 年卷期：v.117,no.39(October 3, 2013)
• ISSN：1520-5215

文摘

We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single- to few-layer graphene sheets using hexamethyldisilazane (HMDS) on a SiO₂/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphene films were characterized by Raman spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30 渭m in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO₂/Si surface through vapor priming of HMDS onto predefined photolithographic patterns. The transparent and conductive HMDS-derived graphene exhibits its potential for widespread electronic and opto-electronic applications.