Oxidation Resistance of Reactive Atoms in Graphene
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- 作者：Matthew F. Chisholm ; Gerd Duscher ; Wolfgang Windl
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：September 12, 2012
- 年：2012
- 卷：12
- 期：9
- 页码：4651-4655
- 全文大小：295K
- 年卷期：v.12,no.9(September 12, 2012)
- ISSN：1530-6992
文摘
We have found that reactive elements that are normally oxidized at room temperature are present as individual atoms or clusters on and in graphene. Oxygen is present in these samples but it is only detected in the thicker amorphous carbon layers present in the graphene specimens we have examined. However, we have seen no evidence that oxygen reacts with the impurity atoms and small clusters of these normally reactive elements when they are incorporated in the graphene layers. First principles calculations suggest that the oxidation resistance is due to kinetic effects such as preferential bonding of oxygen to nonincorporated atoms and H passivation. The observed oxidation resistance of reactive atoms in graphene may allow the use of these incorporated metals in catalytic applications. It also opens the possibility of designing and producing electronic, opto-electronic, and magnetic devices based on these normally reactive atoms.