The new
perov
skite PbVO
3 wa
s synthe
sized under high-tem
perature and high-
pre
ssurecondition
s. It
s cry
stal
structure (
a = 3.80005(6) Å,
c = 4.6703(1) Å,
Z = 1, S.G.
P4
mm)contain
s i
solated layer
s of corner-
shared VO
5 pyramid
s, which are formed in
stead ofoctahedra due to a
strong tetragonal di
stortion (
c/
a = 1.23). The lead atom i
s shifted out ofthe center of the unit cell toward one of two [VO
2]-layer
s due to the influence of the lone
pair. Thi
s new
perov
skite exhibit
s a
semiconductor-like
![](/image<font color=)
s/gifchar
s/rho.gif" BORDER=0 >(
T) de
pendence down to 2 K. Thi
sbehavior can be qualitatively ex
plained by taking into account
strong electron correlation
sin electronic
structure calculation
s.