Orientation-Controlled Growth of Pt Films on SrTiO3 (001) by Atomic Layer Deposition

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• 作者：Jung Joon Pyeon ; Jun-Yun Kang ; Seung-Hyub Baek ; Chong-Yun Kang ; Jin-Sang Kim ; Doo Seok Jeong ; Seong Keun Kim
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：October 13, 2015
• 年：2015
• 卷：27
• 期：19
• 页码：6779-6783
• 全文大小：303K
• ISSN：1520-5002

文摘

We grew Pt films on TiO₂-terminated SrTiO₃ (001) by atomic layer deposition, using trimethyl(methylcyclopentadienyl)-platinum(IV) as the Pt source and O₂ and O₃ as the oxidants. The orientation of the Pt films grown with O₂ varied from (111) to (001) as the growth temperature was increased from 220 to 350 掳C, while the Pt films grown with O₃ have a strong preference for the (111) orientation even at a high growth temperature of 350 掳C. The difference in the orientation of the Pt films on SrTiO₃ (001) was attributed to changes in the degree of chemical bonding across the Pt/SrTiO₃ interface with respect to the oxidant. We observed an increase in Pt鈥揙 bonding at the interface between the Pt grown with O₃ and the SrTiO₃ substrate. The interfacial energy of Pt (111)鈭rTiO₃ (001) may have been significantly decreased by the increase in Pt鈥揙 bonding at the interface, which eventually led to the strong (111) preference of the Pt grown with O₃. The findings provide the possibility of controlling the orientation of Pt without manipulating the kinetic energy of crystal growth.