Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

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• 作者：PhaniKiran Vabbina ; Nitin Choudhary ; Al-Amin. Chowdhury ; Raju Sinha ; Mustafa Karabiyik ; Santanu Das ; Wonbong Choi ; Nezih Pala
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：July 22, 2015
• 年：2015
• 卷：7
• 期：28
• 页码：15206-15213
• 全文大小：436K
• ISSN：1944-8252

文摘

Two dimensional (2D) Molybdenum disulfide (MoSb>2b>) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoSb>2b> photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoSb>2b> with graphene to form a MoSb>2b>/graphene Schottky photodetector where photo generated holes travel from graphene to MoSb>2b> over the Schottky barrier under illumination. We found that the p-type MoSb>2b> forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW^鈥? and a noise equivalent power of 7.8 脳 10^鈥?2 W/鈭欻z at 1440 nm.