We report on temperature-dependent charge transport in heavily doped Mn
+-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Keywords:
Mott hopping; nanowires; self-assembly; ion-implantation; GaMnAs; spintronics