Electron-Phonon Coupling and Localization of Excitons in Single Silicon Nanocrystals
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- 作者：Jö ; rg Martin ; Frank Cichos ; Friedrich Huisken ; Christian von Borczyskowski
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：February 2008
- 年：2008
- 卷：8
- 期：2
- 页码：656 - 660
- 全文大小：104K
- 年卷期：v.8,no.2(February 2008)
- ISSN：1530-6992
文摘
We report a detailed photoluminescence (PL) study on single silicon nanocrystals produced by laser pyrolysis. The PL spectra reveal nearlyhomogeneously broadened zero-phonon lines coupled to Si-O-Si phonon transitions in the SiO2 shell. A systematic investigation of electron-phonon coupling is reported on the basis of single nanocrystals. The stepwise localization of electron and hole at the Si-SiO2 interface fornanocrystals smaller than d 
2.7 nm is driven by electron-phonon coupling. From the localization energies the effective Bohr radii of the(localized) electron and hole are estimated to be in the range of 1-2 bond lengths of Si-O and Si-Si.
2.7 nm is driven by electron-phonon coupling. From the localization energies the effective Bohr radii of the(localized) electron and hole are estimated to be in the range of 1-2 bond lengths of Si-O and Si-Si.