Through rigorous contro
l of preparation conditions, organized mono
layers with a high
lyreproducib
le structure can be formed by so
lution se
lf-assemb
ly of octadecanethio
l on GaAs (001) at ambienttemperature. A combination of characterization probes revea
l a structure with conformationa
lly ordereda
lky
l chains ti
lted on average at 14 ± 1
![](/images/entities/deg.gif)
from the surface norma
l with a 43 ± 5
![](/images/entities/deg.gif)
twist, a high
ly o
leophobicand hydrophobic ambient surface, and direct S-GaAs attachment. Ana
lysis of the ti
lt ang
le and fi
lm thicknessdata shows a significant mismatch of the average adsorbate mo
lecu
le spacings with the spacings of anintrinsic GaAs(001) surface
lattice. The mono
layers are stab
le up to ~100
![](/images/entities/deg.gif)
C and exhibit an overa
ll therma
lstabi
lity which is
lower than that of the same mono
layers on Au{111} surfaces. A two-step so
lution assemb
lyprocess is observed: rapid adsorption of mo
lecu
les over the first severa
l hours to form disordered structureswith mo
lecu
les
lying c
lose to the substrate surface, fo
llowed by a s
low densification and asymptotic approachto fina
l ordering. This process, whi
le simi
lar to the assemb
ly of a
lkanethio
ls on Au{111}, is near
ly 2 ordersof magnitude s
lower. Fina
lly, despite differences in assemb
ly rates and the therma
l stabi
lity, exchangeexperiments with isotopica
lly tagged mo
lecu
les show that the octadecanethio
l on GaAs(001) mono
layersundergo exchange with so
lute thio
l mo
lecu
les at rough
ly the same rate as the corresponding exchangesof the same mono
layers on Au{111}.