Direct Covalent Grafting of Conjugated Molecules onto Si, GaAs, and Pd Surfaces from Aryldiazonium Salts
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- 作者：Michael P. Stewart ; Francisco Maya ; Dmitry V. Kosynkin ; Shawn M. Dirk ; Joshua J. Stapleton ; Christine L. McGuiness ; David L. Allara ; and James M. Tour
- 刊名：Journal of the American Chemical Society
- 出版年：2004
- 出版时间：January 14, 2004
- 年：2004
- 卷：126
- 期：1
- 页码：370 - 378
- 全文大小：333K
- 年卷期：v.126,no.1(January 14, 2004)
- ISSN：1520-5126
文摘
Using aryldiazonium salts that are air-stable and easily synthesized, we describe here a one-step, room-temperature route to direct covalent bonds between 
-conjugated organic molecules on threematerial surfaces: Si, GaAs, and Pd. The Si can be in the form of single crystal Si including heavily dopedp-type Si, intrinsic Si, heavily doped n-type Si, on Si(111) and Si(100), and on n-type polycrystalline Si.The formation of the aryl-metal or aryl-semiconductor bond attachments was confirmed by corroboratingevidence from ellipsometry, reflectance FTIR, XPS, cyclic voltammetry, and AFM analyses of the surface-grafted monolayers. A data-encompassing explanation for the mechanism suggests a diazonium activationby reduction at the open circuit potential, with aryl radical secondary products bonding to the surface. Thesynthetic details are included for preparing the surface-grafted monolayers and the precursor diazoniumsalts. This spontaneous diazonium activation reaction offers an attractive route to highly passivating, robustmonolayers and multilayers on many surfaces that allow for strong bonds between carbon and surfaceatoms with molecular species that are near perpendicular to the surface.
-conjugated organic molecules on threematerial surfaces: Si, GaAs, and Pd. The Si can be in the form of single crystal Si including heavily dopedp-type Si, intrinsic Si, heavily doped n-type Si, on Si(111) and Si(100), and on n-type polycrystalline Si.The formation of the aryl-metal or aryl-semiconductor bond attachments was confirmed by corroboratingevidence from ellipsometry, reflectance FTIR, XPS, cyclic voltammetry, and AFM analyses of the surface-grafted monolayers. A data-encompassing explanation for the mechanism suggests a diazonium activationby reduction at the open circuit potential, with aryl radical secondary products bonding to the surface. Thesynthetic details are included for preparing the surface-grafted monolayers and the precursor diazoniumsalts. This spontaneous diazonium activation reaction offers an attractive route to highly passivating, robustmonolayers and multilayers on many surfaces that allow for strong bonds between carbon and surfaceatoms with molecular species that are near perpendicular to the surface.