Ballistic Transport Exceeding 28 μm in CVD Grown Graphene

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• 作者：Luca Banszerus ; Michael Schmitz ; Stephan Engels ; Matthias Goldsche ; Kenji Watanabe ; Takashi Taniguchi ; Bernd Beschoten ; Christoph Stampfer
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：16
• 期：2
• 页码：1387-1391
• 全文大小：352K
• ISSN：1530-6992

文摘

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm²/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.