Optical Switching of Porphyrin-Coated Silicon Nanowire Field Effect Transistors

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• 作者：Clemens B. Winkelmann ; Irina Ionica ; Xavier Chevalier ; Guy Royal ; Christophe Bucher ; Vincent Bouchiat
• 刊名：Nano Letters
• 出版年：2007
• 出版时间：June 2007
• 年：2007
• 卷：7
• 期：6
• 页码：1454 - 1458
• 全文大小：2972K
• 年卷期：v.7,no.6(June 2007)
• ISSN：1530-6992

文摘

We study porphyrin derivative coated silicon nanowire field effect transistors (SiNW-FETs), which display a large, stable, and reproducibleconductance increase upon illumination. The efficiency and the kinetics of the optical switching are studied as a function of gate voltage,illumination wavelength, and temperature. The decay kinetics from the high- to the low-conductance state is governed by charge recombinationvia tunneling, with a rate depending on the state of the SiNW-FET. The comparison to porphyrin-sensitized carbon nanotube FETs allows theenvironment- and molecule-dependent photoconversion process to be distinguished from the charge-to-current transducing effect of thesemiconducting channel.