Increasing Polycrystalline Zinc Oxide Grain Size by Control of Film Preferential Orientation

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• 作者：Lorenzo Fanni ; A. Brian Aebersold ; Monica Morales-Masis ; Duncan T. L. Alexander ; A茂cha Hessler-Wyser ; Sylvain Nicolay ; C茅cile H茅bert ; Christophe Ballif
• 刊名：Crystal Growth & Design
• 出版年：2015
• 出版时间：December 2, 2015
• 年：2015
• 卷：15
• 期：12
• 页码：5886-5891
• 全文大小：482K
• ISSN：1528-7505

文摘

We investigate the structural evolution of polycrystalline zinc oxide films grown by low pressure metal鈥搊rganic chemical vapor deposition. The goal is to achieve larger grains鈥攍eading to higher charge carrier mobility from lower grain boundary density鈥攂y controlling the grain orientation during growth. The results are 2-fold. First we describe how the combination of deposition temperature and gas flow influences the nucleation and film thickening stages: low temperature and high gas flow favor a high nucleation density and the development of c-textured films, whereas high temperature and low gas flow lead to a lower nucleation density and a-textured films. Second we demonstrate how a fine control of the film preferential orientation at the different growth stages allows the fabrication of films with grains that are 25% larger, hence improving the carrier mobility with respect to the reference film.