Molecular Origins of Defects in Organohalide Perovskites and Their Influence on Charge Carrier Dynamics

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• 作者：Robert J. Stewart ; Christopher Grieco ; Alec V. Larsen ; Grayson S. Doucette ; John B. Asbury
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：June 16, 2016
• 年：2016
• 卷：120
• 期：23
• 页码：12392-12402
• 全文大小：565K
• 年卷期：0
• ISSN：1932-7455

文摘

The chemical origins of charge recombination centers in lead-based organohalide perovskites were investigated using a combination of quantitative solution chemistry, X-ray diffraction, and time-resolved photoluminescence spectroscopy. We explored the complex, concentration-dependent solution equilibria among iodoplumbate coordination complexes that have been implicated as potential midgap states in organohalide perovskites. High concentrations of PbI₂, PbI₃^–, and PbI₄^2– were found in precursor solutions that match those used to deposit perovskite films for solar cell applications. We found that the concentration of tetraiodoplumbate PbI₄^2– is uniquely correlated with the density of charge recombination centers found in the final perovskite films regardless of the lead precursor used to cast the films. However, mixed-halide perovskites commonly referred to as CH₃NH₃PbI_3–xCl_x suppressed the formation of PbI₄^2– in comparison to perovskites that included only iodide, which is consistent with the longer charge carrier lifetimes reported in mixed-halide perovskites. These findings bring a molecular-level view to the chemical origins of charge recombination centers that provides a fundamental basis from which to understand the reported improvement in uniformity of perovskite films and devices deposited using sequential methods. These findings also suggest new approaches to control the formation of defect precursors during the deposition of organohalide perovskite absorbers.