Atmospheric Pressure Atomic Layer Deposition of Al2O3 Using Trimethyl Aluminum and Ozone

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• 作者：Moataz Bellah M. Mousa ; Christopher J. Oldham ; Gregory N. Parsons
• 刊名：Langmuir
• 出版年：2014
• 出版时间：April 8, 2014
• 年：2014
• 卷：30
• 期：13
• 页码：3741-3748
• 全文大小：443K
• 年卷期：v.30,no.13(April 8, 2014)
• ISSN：1520-5827

文摘

High throughput spatial atomic layer deposition (ALD) often uses higher reactor pressure than typical batch processes, but the specific effects of pressure on species transport and reaction rates are not fully understood. For aluminum oxide (Al₂O₃) ALD, water or ozone can be used as oxygen sources, but how reaction pressure influences deposition using ozone has not previously been reported. This work describes the effect of deposition pressure, between 2 and 760 Torr, on ALD Al₂O₃ using TMA and ozone. Similar to reports for pressure dependence during TMA/water ALD, surface reaction saturation studies show self-limiting growth at low and high pressure across a reasonable temperature range. Higher pressure tends to increase the growth per cycle, especially at lower gas velocities and temperatures. However, growth saturation at high pressure requires longer O₃ dose times per cycle. Results are consistent with a model of ozone decomposition kinetics versus pressure and temperature. Quartz crystal microbalance (QCM) results confirm the trends in growth rate and indicate that the surface reaction mechanisms for Al₂O₃ growth using ozone are similar under low and high total pressure, including expected trends in the reaction mechanism at different temperatures.