Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

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• 作者：Jinshui Miao ; Suoming Zhang ; Le Cai ; Martin Scherr ; Chuan Wang
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：September 22, 2015
• 年：2015
• 卷：9
• 期：9
• 页码：9236-9243
• 全文大小：539K
• ISSN：1936-086X

文摘

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 渭A/渭m) and transconductance (70 渭S/渭m) at a V_DS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on鈥搊ff current ratio of 10² even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al₂O₃ gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.