Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4
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- 作者：Taek S. Yang ; Ki-Seok An ; Eun-Joo Lee ; Wontae Cho ; Hong S. Jang ; Sun K. Park ; Young K. Lee ; Taek-Mo Chung ; Chang G. Kim ; Sungmoon Kim ; Jin-Ha Hwang ; Choongkeun Lee ; Nam-Soo Lee ; and Yunsoo Kim
- 刊名：Chemistry of Materials
- 出版年：2005
- 出版时间：December 27, 2005
- 年：2005
- 卷：17
- 期：26
- 页码：6713 - 6718
- 全文大小：153K
- 年卷期：v.17,no.26(December 27, 2005)
- ISSN：1520-5002
文摘
Hafnium oxide films have been deposited on silicon substrates by metal organic chemical vapordeposition using the novel single precursor, hafnium 3-methyl-3-pentoxide {Hf[OC(CH3)(C2H5)2]4,Hf(mp)4}, with no additional oxygen source, and the deposition mechanism was elucidated. Hf(mp)4 isa liquid at room temperature and has a moderate vapor pressure comparable to that of hafnium tert-butoxide, Hf(OtBu)4, and a lower residual weight (<10%) in thermogravimetric analysis. The depositionrate was found to be ~27 Å/min at 400 
C, and the activation energy was 68.1 kJ/mol, which is higherthan those of other hafnium alkoxide and hafnium amide precursors. By gas chromatography/massspectroscopy and nuclear magnetic resonance analyses of the thermally decomposed vapor phase productscollected during the deposition of HfO2 films, it was clearly found that they are grown via 
-hydrogenelimination processes of the Hf(mp)4 single precursor. Negligible carbon incorporation of the HfO2 films,examined by X-ray photoelectron spectroscopy and depth-profiling Auger electron spectroscopy, indicatesthat, except for the -hydrogen elimination processes, no additional decomposition and/or recombinationprocesses contributed to the HfO2 film growth. The morphology, crystallinity, and electrical propertiesof the HfO2 films were characterized by scanning electron microscopy, atomic force microscopy, X-raydiffraction, and capacitance-voltage and current-voltage measurements.
C, and the activation energy was 68.1 kJ/mol, which is higherthan those of other hafnium alkoxide and hafnium amide precursors. By gas chromatography/massspectroscopy and nuclear magnetic resonance analyses of the thermally decomposed vapor phase productscollected during the deposition of HfO2 films, it was clearly found that they are grown via -hydrogenelimination processes of the Hf(mp)4 single precursor. Negligible carbon incorporation of the HfO2 films,examined by X-ray photoelectron spectroscopy and depth-profiling Auger electron spectroscopy, indicatesthat, except for the -hydrogen elimination processes, no additional decomposition and/or recombinationprocesses contributed to the HfO2 film growth. The morphology, crystallinity, and electrical propertiesof the HfO2 films were characterized by scanning electron microscopy, atomic force microscopy, X-raydiffraction, and capacitance-voltage and current-voltage measurements.