Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2

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• 作者：Hyo Jun Jung ; Jeong Hwan Han ; Eun Ae Jung ; Bo Keun Park ; Jin-Ha Hwang ; Seung Uk Son ; Chang Gyoun Kim ; Taek-Mo Chung ; Ki-Seok An
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：December 23, 2014
• 年：2014
• 卷：26
• 期：24
• 页码：7083-7090
• 全文大小：507K
• ISSN：1520-5002

文摘

Ruthenium (Ru) and ruthenium oxide (RuO₂) thin films were grown by atomic layer deposition (ALD) using a novel zerovalent (1,5-hexadiene)(1-isopropyl-4-methylbenzene)Ru complex and O₂ as the Ru precursor and oxidant, respectively. The self-limiting growth mode for the Ru and RuO₂ ALD processes was achieved while varying the Ru precursor and O₂ feeding time. Metallic Ru films were deposited at growth temperatures of 230鈥?50 掳C, while the temperature window for the growth of the RuO₂ film was limited to <230 掳C. At 270 掳C, the growth per cycle (GPC) of Ru ALD was 0.076 nm/cycle, and the incubation times of Ru on SiO₂ and TiN substrates were considerably short (3 cycles on SiO₂, negligible on TiN) compared to that of Ru ALD from a high-valent Ru precursor and O₂. The resistivity of the Ru film was as low as 29鈥?6 渭惟路cm at growth temperatures of 270鈥?50 掳C. On the other hand, the RuO₂ film was grown at a low temperature of 200 掳C and showed a GPC of 0.15 nm/cycle with a resistivity of 鈭?70 渭惟路cm. In situ quadruple mass spectrometry analysis of the CO₂ byproduct revealed that the amount of subsurface oxygen extracted during the Ru pulse half-cycle affected the resultant film phase, either Ru or RuO₂, which was strongly influenced by the growth temperature.