Photoconductivity in the Chalcohalide Semiconductor, SbSeI: a New Candidate for Hard Radiation Detection

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• 作者：Arief C. Wibowo ; Christos D. Malliakas ; Zhifu Liu ; John. A. Peters ; Maria Sebastian ; Duck Young Chung ; Bruce W. Wessels ; Mercouri G. Kanatzidis
• 刊名：Inorganic Chemistry
• 出版年：2013
• 出版时间：June 17, 2013
• 年：2013
• 卷：52
• 期：12
• 页码：7045-7050
• 全文大小：359K
• 年卷期：v.52,no.12(June 17, 2013)
• ISSN：1520-510X

文摘

We investigated an antimony chalcohalide compound, SbSeI, as a potential semiconductor material for X-ray and 纬-ray detection. SbSeI has a wide band gap of 1.70 eV with a density of 5.80 g/cm³, and it crystallizes in the orthorhombic Pnma space group with a one-dimensional chain structure comprised of infinite zigzag chains of dimers [Sb₂Se₄I₈]_n running along the crystallographic b axis. In this study, we investigate conditions for vertical Bridgman crystal growth using combinations of the peak temperature and temperature gradients as well as translation rate set in a three-zone furnace. SbSeI samples grown at 495 掳C peak temperature and 19 掳C/cm temperature gradient with 2.5 mm/h translation rate produced a single phase of columnar needlelike crystals aligned along the translational direction of the growth. The ingot sample exhibited an n-type semiconductor with resistivity of 10⁸ 惟路cm. Photoconductivity measurements on these specimens allowed us to determine mobility鈥搇ifetime (渭蟿) products for electron and hole carriers that were found to be of similar order of magnitude (10^鈥? cm²/V). Further, the SbSeI ingot with well-aligned, one-dimensional columnar needlelike crystals shows an appreciable response of Ag K伪 X-ray.