Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices
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- 作者：Andrei G. F. Garcia ; Michael Neumann ; Fran莽ois Amet ; James R. Williams ; Kenji Watanabe ; Takashi Taniguchi ; David Goldhaber-Gordon
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：September 12, 2012
- 年：2012
- 卷：12
- 期：9
- 页码：4449-4454
- 全文大小：444K
- 年卷期：v.12,no.9(September 12, 2012)
- ISSN：1530-6992
文摘
Hexagonal boron nitride (h-BN) films have attracted considerable interest as substrates for graphene. (Dean, C. R. et al. Nat. Nanotechnol.class="NLM_x"> 2010class="NLM_x">, 5class="NLM_x">, 722class="NLM_x">鈥?/span>6; Wang, H. et al. Electron Device Lett.class="NLM_x"> 2011class="NLM_x">, 32class="NLM_x">, 1209class="NLM_x">鈥?/span>1211; Sanchez-Yamagishi, J. et al. Phys. Rev. Lett.class="NLM_x"> 2012class="NLM_x">, 108class="NLM_x">, 1class="NLM_x">鈥?/span>5.) We study the presence of organic contaminants introduced by standard lithography and substrate transfer processing on h-BN films exfoliated on silicon oxide substrates. Exposure to photoresist processing adds a large broad luminescence peak to the Raman spectrum of the h-BN flake. This signal persists through typical furnace annealing recipes (Ar/H2). A recipe that successfully removes organic contaminants and results in clean h-BN flakes involves treatment in Ar/O2 at 500 掳C.