High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth

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• 作者：Xin Miao ; Kelson Chabak ; Chen Zhang ; Parsian K. Mohseni ; Dennis Walker ; Jr. ; Xiuling Li
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：May 13, 2015
• 年：2015
• 卷：15
• 期：5
• 页码：2780-2786
• 全文大小：409K
• ISSN：1530-6992

文摘

itle> High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth - Nano Letters (ACS Publications) itle> itle" content="High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth" />ith 鈭?00% yield and precisely defined positions are realized via a patterned vapor鈥搇iquid鈥搒olid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 104, 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 脳 1.5 cm2 chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics." /> class="journal article pod"> it.org&loc=%2Fdoi%2Fabs%2F10.1021%2Fnl503596j&pubId=419762264" style="text-decoration: none; border: none;">