Electronic Transport in Natively Oxidized Silicon Nanowires

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• 作者：Mohammad Koleini ; Lucio Colombi Ciacchi ; Maria Victoria Fernández-Serra
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：April 26, 2011
• 年：2011
• 卷：5
• 期：4
• 页码：2839-2846
• 全文大小：1062K
• 年卷期：0
• ISSN：1936-086X

文摘

Silicon nanowires are widely used as active functional elements in advanced electronic devices, most notably in biological sensors. While surface oxidation of the wires occurs upon exposure to a wet environment, theoretical studies are often limited to ideally crystalline, H-terminated wire models. We present an accurate computational study of the electronic and transport properties of natively oxidized, ultrathin silicon nanowires including dopant elements. Comparisons with perfectly ordered and distorted H-terminated structures reveal an unexpected interplay of effects that oxidation-induced structural distortions and electronegative Si/SiO_x interfaces have on the conductance of B- or P-doped nanowires.