Critical Behavior in Doping-Driven Metal–Insulator Transition on Single-Crystalline Organic Mott-FET

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• 作者：Yoshiaki SatoYoshitaka Kawasugi ; Masayuki Suda ; Hiroshi M. Yamamoto ; Reizo Kato
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：708-714
• 全文大小：486K
• ISSN：1530-6992

文摘

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator κ-(BEDT-TTF)₂CuN(CN)₂Cl (κ-Cl). The FET shows a continuous metal–insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum e²/h, and hence is not associated with “bad metal” behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions.