Study of Growth Mechanism and Properties of Zinc Indium Sulfide Thin Films Deposited by Atomic Layer Chemical Vapor Deposition over the Entire Range of Composition

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• 作者：Pascal Geneve虂e ; Fre虂de虂rique Donsanti ; Gilles Renou ; Daniel Lincot
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：September 1, 2011
• 年：2011
• 卷：115
• 期：34
• 页码：17197-17205
• 全文大小：977K
• 年卷期：v.115,no.34(September 1, 2011)
• ISSN：1932-7455

文摘

In this study, zinc indium sulfide (ZIS) thin films of different compositions ranging from pure In₂S₃ to pure ZnS were synthesized by atomic layer chemical vapor deposition (ALCVD). In situ growth mechanism studies were carried out using the quartz crystal microbalance technique. They evidence preferential surface exchange reactions between indium and zinc ions during ALCVD pulses, which control the overall composition. Optical characterizations indicate a bandgap varying from 2.0 eV with indirect transition for In₂S₃ to 3.6 eV with direct transition for ZnS. As deposited films present good crystallinity toward the two binary compounds which decreases at intermediate compositions. An amorphous phase appears in the material for the In/(In + Zn) ratio in the range 11鈥?3 at % attributed to the conflict between the crystallographic structures of ZnS and In₂S₃. Under thermal annealing treatments, grown films undergo crystallization processes. In particular, the thermal annealing of a sample with In/(In + Zn) 73 at % leads to the formation of the crystalline phase ZnIn₂S₄ with the presence of the crystallized In₂S₃ phase.