Nondestructive Contact Deposition for Molecular Electronics: Si-Alkyl//Au Junctions

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• 作者：Nir Stein ; Roman Korobko ; Omer Yaffe ; Rotem Har Lavan ; Hagay Shpaisman ; Einat Tirosh ; Ayelet Vilan ; David Cahen
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：July 29, 2010
• 年：2010
• 卷：114
• 期：29
• 页码：12769-12776
• 全文大小：299K
• 年卷期：v.114,no.29(July 29, 2010)
• ISSN：1932-7455

文摘

One of the major problems in molecular electronics is how to make electronically conducting contact to the “soft” organic and biomolecules without altering the molecules. As a result, only a small number of metals can be applied, mostly by special deposition methods with severe limitations. Transferring a predefined thin metal leaf onto a molecular layer provides a nondestructive, noninvasive contacting method that is, in principle, applicable to many types of metal and a variety of metal/molecules combinations. Here we report a modification of our earlier lift-off, float-on (LOFO) method, using as a basis its offspring, the polymer-assisted lift-off (PALO) method, where a backing polymer enables simultaneous deposition of multiple contacts as well as reduces wrinkles in the thin metal leaf. The modified PALO (MoPALO) method, reported here, adds lithography steps to obviate the need to punch through the polymer, as is done to complete PALO contacts. Morphological characterization of the electrodes indicates highly uniform, wrinkle-free contacts of negligible roughness. The good electrical performance of the MoPALO contacts was proven with metal/organic-monolayer/semiconductor (MOMS) junctions, which are known to be very sensitive to molecular degradation and metal penetration. We also show how MoPALO contacts enabled us to compare the effect of varying the metal work function and contact area on the current−voltage characteristics of MOMS devices.