Effects of Pulsing and Interfacial Potentials on Tellurium鈥揙rganic Heterostructured Films

详细信息    查看全文

• 作者：Robert M. Ireland ; Thomas J. Dawidczyk ; Patrick Cottingham ; Tyrel McQueen ; Gary Johns ; Nina Markovic ; Lushuai Zhang ; Padma Gopalan ; Howard E. Katz
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：March 13, 2013
• 年：2013
• 卷：5
• 期：5
• 页码：1604-1611
• 全文大小：534K
• 年卷期：v.5,no.5(March 13, 2013)
• ISSN：1944-8252

文摘

Polycrystalline thin films of tellurium and organic semiconductor molecules are paired in heterostructured field-effect transistors built on Si/SiO₂ substrates. While charge carrier mobilities can exceed 1 cm²/(V s), there is only a limited gate voltage range over which the current is modulated. We employ continuous and pulsed measurements on transistors to explore the influence of charge equilibration time on device behavior, finding that pulsed gating improves output characteristics. We also use surface potential measurements to investigate the interfacial vacuum level offset between materials, and we modify the interlayer potential profile by interposing statically charged dielectric layers on the silicon dioxide. We show that interfacial fields determine the gate voltage range over which Te shows a field effect in heterostructures with organic semiconductors and that modification of these fields can extend this range.

Keywords:

organic electronics; tellurium; field-effect transistors; pulsed gating; interfacial potential differences; azo dye monolayers