Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
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- 作者：Jui-Fen Chien ; Hua-Yang Liao ; Sheng-Fu Yu ; Ray-Ming Lin ; Makoto Shiojiri ; Jing-Jong Shyue ; Miin-Jang Chen
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：January 23, 2013
- 年：2013
- 卷：5
- 期：2
- 页码：227-232
- 全文大小：357K
- 年卷期：v.5,no.2(January 23, 2013)
- ISSN：1944-8252
文摘
Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at 位 鈮?370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.