Highly Selective Wet Etch for High-Resolution Three-Dimensional Nanostructures in Arsenic Sulfide All-Inorganic Photoresist

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• 作者：Sean H. Wong ; Michael Thiel ; Peter Brodersen ; Dieter Fenske ; Geoffrey A. Ozin ; Martin Wegener ; Georg von Freymann
• 刊名：Chemistry of Materials
• 出版年：2007
• 出版时间：August 21, 2007
• 年：2007
• 卷：19
• 期：17
• 页码：4213 - 4221
• 全文大小：615K
• 年卷期：v.19,no.17(August 21, 2007)
• ISSN：1520-5002

文摘

In this work, we present the rational synthesis of a novel, highly selective etchant, N-(4-methoxybenzyl)-(pyren-1-yl)amine, enabling the facile and direct fabrication of free-standing 3D structures within anarsenic-sulfide all-inorganic photoresist, patterned via 3D direct laser writing. The chemical and physicalunderpinnings of this novel wet etchant are described in detail. Our novel molecule enables the fabricationof intricate, shrinkage-free 3D structures with minimum feature sizes of 180 nm in only one etchingstep. Because of the high transparency of arsenic-sulfide glass in the telecommunication window,structures fabricated along these lines could be well-suited as final structural elements for 3D opticalstructures and devices in the sub-micrometer scale. The results presented here enable their facile realization,thus making this material a desirable alternative to traditional photopolymers.