Solution-Processed Transistors Using Colloidal Nanocrystals with Composition-Matched Molecular 鈥淪olders鈥? Approaching Single Crystal Mobility

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• 作者：Jaeyoung Jang ; Dmitriy S. Dolzhnikov ; Wenyong Liu ; Sooji Nam ; Moonsub Shim ; Dmitri V. Talapin
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6309-6317
• 全文大小：554K
• ISSN：1530-6992

文摘

Crystalline silicon-based complementary metal-oxide鈥搒emiconductor transistors have become a dominant platform for today鈥檚 electronics. For such devices, expensive and complicated vacuum processes are used in the preparation of active layers. This increases cost and restricts the scope of applications. Here, we demonstrate high-performance solution-processed CdSe nanocrystal (NC) field-effect transistors (FETs) that exhibit very high carrier mobilities (over 400 cm<sup>2sup>/(V s)). This is comparable to the carrier mobilities of crystalline silicon-based transistors. Furthermore, our NC FETs exhibit high operational stability and MHz switching speeds. These NC FETs are prepared by spin coating colloidal solutions of CdSe NCs capped with molecular solders [Cd<sub>2sub>Se<sub>3sub>]<sup>2鈥?/sup> onto various oxide gate dielectrics followed by thermal annealing. We show that the nature of gate dielectrics plays an important role in soldered CdSe NC FETs. The capacitance of dielectrics and the NC electronic structure near gate dielectric affect the distribution of localized traps and trap filling, determining carrier mobility and operational stability of the NC FETs. We expand the application of the NC soldering process to core鈥搒hell NCs consisting of a III鈥揤 InAs core and a CdSe shell with composition-matched [Cd<sub>2sub>Se<sub>3sub>]<sup>2鈥?/sup> molecular solders. Soldering CdSe shells forms nanoheterostructured material that combines high electron mobility and near-IR photoresponse.