Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors

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• 作者：Dong Wook Chang ; Eun Kwang Lee ; Eun Yeob Park ; Hojeong Yu ; Hyun-Jung Choi ; In-Yup Jeon ; Gyung-Joo Sohn ; Dongbin Shin ; Noejung Park ; Joon Hak Oh ; Liming Dai ; Jong-Beom Baek
• 刊名：The Journal of the American Chemical Society
• 出版年：2013
• 出版时间：June 19, 2013
• 年：2013
• 卷：135
• 期：24
• 页码：8981-8988
• 全文大小：513K
• 年卷期：v.135,no.24(June 19, 2013)
• ISSN：1520-5126

文摘

The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C鈺怬) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between 伪-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around 鈭?6 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm²V^鈥?s^鈥?, respectively.