We present Ra
man scattering results on crystalline Si
1-xGe
x nanowires (0 <
x < 1) grown by the vapor-liquid-solid growth
mechanis
m using che
mical vapor deposition. Typical nanowire dia
meters and lengthswere in the range 80-110 n
m and 15-40
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mages/entities/
mgr.gif">
m, respectively. Three strong Ra
man bands were observed andidentified as perturbed Si-Si (~500 c
m-1)
modes, perturbed Ge-Ge (~280 c
m-1)
modes, and inter
mediatefrequency (~400 c
m-1)
modes assigned to Si-Ge clusters. A broad band is observed in the range ~75-110c
m-1 that is assigned to transverse acoustic
modes. The co
mpositional dependence of these Ra
man bands issi
milar to what is observed in bulk
material and is also found to be in very good agree
ment with the recentlycalculated vibrational density of states for Si
1-xGe
x nanoparticles.