We
present Raman scattering results on crystalline Si
1-xGe
x nanowires (0 <
x < 1) grown by the va
por-liquid-solid growth mechanism using chemical va
por de
position. Ty
pical nanowire diameters and lengthswere in the range 80-110 nm and 15-40
m, res
pectively. Three strong Raman bands were observed andidentified as
perturbed Si-Si (~500 cm
-1) modes,
perturbed Ge-Ge (~280 cm
-1) modes, and intermediatefrequency (~400 cm
-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ~75-110cm
-1 that is assigned to transverse acoustic modes. The com
positional de
pendence of these Raman bands issimilar to what is observed in bulk material and is also found to be in very good agreement with the recentlycalculated vibrational density of states for Si
1-xGe
x nano
particles.