Enhanced High-Temperature Electronic Transport Properties in Nanostructured Epitaxial Thin Films of the Lan+1NinO3
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- 作者：Mó ; nica Burriel ; Gemma Garcia ; Marta D. Rossell ; Albert Figueras ; Gustaaf Van Tendeloo ; José ; Santiso
- 刊名：Chemistry of Materials
- 出版年：2007
- 出版时间：August 7, 2007
- 年：2007
- 卷：19
- 期：16
- 页码：4056 - 4062
- 全文大小：523K
- 年卷期：v.19,no.16(August 7, 2007)
- ISSN：1520-5002
文摘
Epitaxial thin films of lanthanum nickel oxide Ruddlesden-Popper series (Lan+1NinO3n+1) have beenprepared on different single-crystal substrates by metal organic chemical vapor deposition. Varying theLa/Ni composition ratio in the precursor solution allows deposition of films with controlled La/Nistoichiometry ranging between 1 and 2. Epitaxial La2NiO4 (n = 1) and LaNiO3 (n = 
) pure phaseswere obtained for La/Ni close to 2 and 1, respectively. For intermediate La/Ni composition, films witha microstructure consisting of a disordered stacking of nanodomains with progressively increasing averagen value were obtained. Similarly with bulk samples, the electronic conductivity of the nanostructuredfilms increases with the measured average n value, opening the possibility to prepare new mixed ionicand electronic conducting nanocomposite thin films with tailored properties
) pure phaseswere obtained for La/Ni close to 2 and 1, respectively. For intermediate La/Ni composition, films witha microstructure consisting of a disordered stacking of nanodomains with progressively increasing averagen value were obtained. Similarly with bulk samples, the electronic conductivity of the nanostructuredfilms increases with the measured average n value, opening the possibility to prepare new mixed ionicand electronic conducting nanocomposite thin films with tailored properties