Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

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• 作者：Daniela Carta ; Iulia Salaoru ; Ali Khiat ; Anna Regoutz ; Christoph Mitterbauer ; Nicholas M. Harrison ; Themistoklis Prodromakis
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 3, 2016
• 年：2016
• 卷：8
• 期：30
• 页码：19605-19611
• 全文大小：409K
• 年卷期：0
• ISSN：1944-8252

文摘

The next generation of nonvolatile memory storage may well be based on resistive switching in metal oxides. TiO₂ as transition metal oxide has been widely used as active layer for the fabrication of a variety of multistate memory nanostructure devices. However, progress in their technological development has been inhibited by the lack of a thorough understanding of the underlying switching mechanisms. Here, we employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) combined with two-dimensional energy dispersive X-ray spectroscopy (2D EDX) to provide a novel, nanoscale view of the mechanisms involved. Our results suggest that the switching mechanism involves redistribution of both Ti and O ions within the active layer combined with an overall loss of oxygen that effectively render conductive filaments. Our study shows evidence of titanium movement in a 10 nm TiO₂ thin-film through direct EDX mapping that provides a viable starting point for the improvement of the robustness and lifetime of TiO₂-based resistive random access memory (RRAM).